1 power transistors 2sD1457, 2sD1457a silicon npn triple diffusion planar type darlington for power amplification n features l high foward current transfer ratio h fe l high collector to base voltage v cbo l full-pack package which can be installed to the heat sink with one screw n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 200 150 200 5 10 6 60 3 150 C55 to +150 unit v v v a a w ?c ?c n electrical characteristics (t c =25?c) parameter collector cutoff current collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency symbol i cbo v ceo(sus) v ebo h fe * v ce(sat) v be(sat) f t conditions v cb = 200v, i e = 0 i c = 2a, l = 10mh i e = 0.1a, i c = 0 v ce = 2v, i c = 2a i c = 3a, i b = 0.06a i c = 3a, i b = 0.06a v ce = 10v, i c = 0.5a, f = 1mhz min 150 5 700 typ 15 max 100 10000 1.5 2.5 unit m a v v v v mhz 2sD1457 2sD1457a t c =25 c ta=25 c unit: mm internal connection * h fe rank classification rank q p o h fe 700 to 2500 2000 to 5000 4000 to 10000 1:base 2:collector 3:emitter topC3 full pack package(a) 15.0 0.3 21.0 0.5 16.2 0.5 12.5 solder dip 3.5 0.7 15.0 0.2 5.0 0.2 11.0 0.2 10.9 0.5 5.45 0.3 3 2 1 1.1 0.1 2.0 0.2 0.6 0.2 2.0 0.1 f 3.2 0.1 3.2 b c e
2 power transistors 2sD1457, 2sD1457a p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c c ob v cb area of safe operation (aso) r th(t) t 0 150 125 100 25 75 50 0 100 80 60 40 20 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) with a 50 50 2mm al heat sink (p c =3.0w) (1) (2) (3) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 06 5 4 13 2 0 5 4 3 2 1 t c =25?c i b =2.0ma 0.2ma 0.4ma 0.6ma 0.8ma 1.0ma 1.2ma 1.4ma 1.6ma 1.8ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =50 t c =100?c 25?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =50 t c =?5?c 25?c 100?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 10 30 100 300 1000 3000 10000 30000 100000 v ce =2v 25?c ?5?c t c =100?c collector current i c ( a ) forward current transfer ratio h fe 0.1 1 10 100 0.3 3 30 1 3 10 30 100 300 1000 3000 10000 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25?c i cp i c 0.1ms 20ms 3ms t=1ms 2sD1457 2sD1457a dc collector to emitter voltage v ce ( v ) collector current i c ( a ) 10 ? 10 2 10 ? 1 10 ? 10 10 3 10 4 10 ? 1 10 10 2 10 3 (1) (2) (1) p t =10v 0.3a (3w) and without heat sink (2) p t =10v 1.0a (10w) and with a 100 100 2mm al heat sink time t ( s ) thermal resistance r th (t) ( ?c/w )
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